We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Lateral analysis of quasi-index-guided injection lasers: Transition from gain to index guiding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Agrawal, G.P. ; AT&T Bell Laboratories, Murray Hill, NJ, USA

In double-heterostructure stripe-geometry semiconductor lasers an effective lateral index step \Delta n_{L} over the stripe region can be induced through evanescent-field coupling. Such a quasi-index-guided device exhibits a transition from the gain-guided to the index-guided regime when \Delta n_{L} is progressively increased. Using parameters appropriate to a 1.3-μm InGaAsP laser, the transition is shown to occur around \Delta n_{L} \sim 5 \times 10^{-3} . The exact value of \Delta n_{L} depends on the extent of carrier-induced antiguiding. In the transition region the threshold current decreases rapidly, the lateral mode contracts, and the far field changes from a twin-lobe to a single-lobe pattern. Our analysis suggests that a quasi-index-guided device operates most efficiently for values of \Delta n_{L} at which the index-guided regime is just approached. With a further increase of \Delta n_{L} , the mismatch between the gain and mode profiles leads to lower differential quantum efficiencies. Among other structures, the analysis is applicable to a ridge waveguide laser. For a 1.3-μm laser the optimum \Delta n_{L} can be obtained using 0.2-μm-thick cladding layers for a 0.2-μm thick active layer.

Published in:

Lightwave Technology, Journal of  (Volume:2 ,  Issue: 4 )