Referenced Items are not available for this document.
New InGaAsP/InP buried heterostructure laser diodes fabricated by one-step liquid-phase epitaxy are described, in which the InGaAsP active region completely embedded in InP is grown on the top of the mesa stripe formed on the InP substrate while, simultaneously, current confinement structure is automatically formed on both sides of the mesa stripe. These current confinement mesa substrate buried heterostructure laser diodes (CCM-LD's) have current confinement structure which very effectively blocks unwanted leakage current bypassing the light emitting region which has enabled laser operation with a threshold current as low as 20 mA, 70-mW maximum CW output at room temperature, and 125°C maximum CW operation temperature. Life tests over 6000-h CW operation at 70°C and 5 mW/facet have confirmed good reliability of these devices.
Published in:
Lightwave Technology, Journal of
(Volume:2
,
Issue:
4
)
Date of Publication: Aug 1984
- Page(s):
- 496 - 503
- ISSN :
- 0733-8724
- Digital Object Identifier :
- 10.1109/JLT.1984.1073634
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Aug 1984
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
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