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Impact ionization resonance and auger recombination in Hg1 - xCdxTe ( 0.6 \le x \le 0.7 )

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3 Author(s)
Lecoy, G.P. ; Universitè des Science et Techniques du Languedoc, Montpellier Cedex, France ; Orsal, B. ; Alabedra, R.

The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg1-xCdxTe avalanche photodiodes, with0.6 leq x leq 0.7. Forx sim 0.7it is shown that the spin orbit splitting Δ is lower than the bandgap energy Egso that impact ionization is initiated by holes from the Split-off valence band. Forx sim 0.6, Delta sim E_{g}, the rate of the Auger recombination is maximum, corresponding to a resonant impact ionization and to a maximum ratiok = beta / alphawhere α and β are, respectively, the impact ionization coefficient for electrons and holes.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 7 )

Date of Publication:

Jul 1987

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