By Topic

Impact ionization resonance and auger recombination in Hg1 - xCdxTe ( 0.6 \le x \le 0.7 )

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lecoy, G.P. ; Universitè des Science et Techniques du Languedoc, Montpellier Cedex, France ; Orsal, B. ; Alabedra, R.

The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg1-xCdxTe avalanche photodiodes, with 0.6 \leq x \leq 0.7 . For x \sim 0.7 it is shown that the spin orbit splitting Δ is lower than the bandgap energy Egso that impact ionization is initiated by holes from the Split-off valence band. For x \sim 0.6, \Delta \sim E_{g} , the rate of the Auger recombination is maximum, corresponding to a resonant impact ionization and to a maximum ratio k = \beta / \alpha where α and β are, respectively, the impact ionization coefficient for electrons and holes.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 7 )