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Impact ionization resonance and auger recombination in Hg1 - xCdxTe ( 0.6 \le x \le 0.7 )

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3 Author(s)
Lecoy, G.P. ; Universitè des Science et Techniques du Languedoc, Montpellier Cedex, France ; Orsal, B. ; Alabedra, R.

The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg1-xCdxTe avalanche photodiodes, with 0.6 \leq x \leq 0.7 . For x \sim 0.7 it is shown that the spin orbit splitting Δ is lower than the bandgap energy Egso that impact ionization is initiated by holes from the Split-off valence band. For x \sim 0.6, \Delta \sim E_{g} , the rate of the Auger recombination is maximum, corresponding to a resonant impact ionization and to a maximum ratio k = \beta / \alpha where α and β are, respectively, the impact ionization coefficient for electrons and holes.

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Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 7 )