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A novel high-power laser structure with current-blocked regions near cavity facets

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7 Author(s)
Shibutani, T. ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Kume, M. ; Hamada, K. ; Shimizu, H.
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A novel high-power GaAlAs laser structure has been developed. In the new structure, current-blocked regions are formed near both facets for suppressing local temperature rise. Furthermore, the active layer is made thin only in the vicinity of the facets in order to enlarge the spot size without significant increase of the operating current. The experimentally fabricated laser with the new structure exhibited a COD power density 1.4 times higher and a degradation rate 1/2 times lower than those of the conventional structure lasers.

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Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 6 )