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A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVD

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6 Author(s)
Yoshikawa, A. ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Yamamoto, Atsuya ; Hirose, M. ; Sugino, Takashi
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A new technology of fabricating a buried heterostructure laser with a narrow active layer in a single-step MOCVD process other than the conventional two-step process is proposed. The technology is based on the separate growth on the undercut ridge. The anisotropic growth has been found to be very useful for formation of a very narrow active region in a self-aligned manner. The novel RBH laser implemented by the single-step MOCVD process has been proposed. The RBH laser has exhibited CW lasing oscillation with a threshold current as low as 30 mA at room temperature and with the circular beam spot.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 6 )

Date of Publication:

Jun 1987

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