Referenced Items are not available for this document.
A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.
Published in:
Quantum Electronics, IEEE Journal of
(Volume:23
,
Issue:
6
)
Date of Publication: Jun 1987
- Page(s):
- 919 - 924
- ISSN :
- 0018-9197
- Digital Object Identifier :
- 10.1109/JQE.1987.1073402
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Jun 1987
- Sponsored by :
- IEEE Photonics Society
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