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A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

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5 Author(s)
T. Chen ; Chengdu Institute of Radio Engineering, China ; K. Utaka ; Yuhua Zhuang ; Ya-Yun Liu
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A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

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IEEE Journal of Quantum Electronics  (Volume:23 ,  Issue: 6 )