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Low threshold ridge waveguide single quantum well laser processed by chemically assisted ion beam etching

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4 Author(s)
Zhu, L.D. ; Cornell University, Ithaca, NY, USA ; Feak, G. ; Davis, Robert J. ; Ballantyne, Joseph M.

Fundamental lateral mode ridge waveguide lasers have been developed utilizing chemically assisted ion beam etching. The lasers exhibited mean threshold currents of 12.6 mA with close to 100 percent yield and differential quantum efficiencies as high as 69 percent.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 3 )