Cart (Loading....) | Create Account
Close category search window

Prevention of current leakage in mass-transported GaInAsP/InP buried-heterostructure lasers with narrow transported regions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Liau, Z.L. ; Lincoln Laboratory, MIT, Lexington, MA, USA ; Walpole, J.N.

The use of narrow transported regions as a simple technique to minimize current leakage has been analyzed. In the present model, current leakage occurs when the voltage buildup in the p-region is sufficiently large to turn on the InP homojunction in the transported region. The voltage buildup, the injected electron concentration, the drift and diffusion of the electrons, and the resulting homojunction current have been analyzed in detail. A simple formula has been derived which allows for device design for operation at high currents without a significant leakage.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 3 )

Date of Publication:

Mar 1987

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.