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Ridge waveguide AlGaAs/GaAs distributed feedback lasers

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6 Author(s)
Noda, S. ; Central Research Laboratory, Mitsubishi Electronic Corp., Hyogo, Japan ; Kojima, K. ; Mitsunaga, Kazumasa ; Kyuma, K.
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Ridge waveguide AlGaAs/GaAs distributed feedback lasers were fabricated by a two-step molecular beam epitaxy. A threshold current as low as 37 mA, which is the lowest ever reported, was obtained under a continuous wave condition at room temperature. The low threshold current is due to the larger coupling coefficient (91 cm-1) and a good current and optical confinement. The effects of the facet coatings were investigated and a high-power and a high-temperature operation was obtained. The polarization and the dynamic behavior were also investigated.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 2 )

Date of Publication:

Feb 1987

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