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Ridge waveguide AlGaAs/GaAs distributed feedback lasers

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6 Author(s)
S. Noda ; Central Research Laboratory, Mitsubishi Electronic Corp., Hyogo, Japan ; K. Kojima ; K. Mitsunaga ; K. Kyuma
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Ridge waveguide AlGaAs/GaAs distributed feedback lasers were fabricated by a two-step molecular beam epitaxy. A threshold current as low as 37 mA, which is the lowest ever reported, was obtained under a continuous wave condition at room temperature. The low threshold current is due to the larger coupling coefficient (91 cm-1) and a good current and optical confinement. The effects of the facet coatings were investigated and a high-power and a high-temperature operation was obtained. The polarization and the dynamic behavior were also investigated.

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IEEE Journal of Quantum Electronics  (Volume:23 ,  Issue: 2 )