By Topic

Bistability in grating-tuned external-cavity semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zorabedian, Paul ; Hewlett-Packard Laboratories, Palo Alto, CA, USA ; Trutna, W. ; Cutler, L.S.

Bistability has been observed in the tuning characteristic and power versus current relation of a 1.3 μm grating-tuned external-cavity semiconductor laser. Tuning-direction reversal, current variations, and feedback interruption can change the output power and threshold current at a given wavelength. These effects are shown theoretically to be due to the coupling of the semiconductor gain and index of refraction. From measurements of the semiconductor chip facet reflectivity, solitary laser diode mode spectrum, and tuning curve in the presence of external feedback, the analysis yields values for the external feedback strength, semiconductor modal loss, and linewidth enhancement factor. Using an InGaAsP double-channel-planar-buried-heterostructure laser diode with a 4 percent reflectivity antireflection-coated facet inside an external cavity consisting of a 0.60 numerical aperture lens and a 1200 line/mm diffraction grating, we found 22 percent external feedback, 60 cm-1modal loss, and a linewidth enhancement factor \alpha = -7.1 .

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 11 )