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Electrooptical effects in silicon

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2 Author(s)
Soref, Richard A. ; USAF Rome Lab., Hanscom Air Force Base, MA, USA ; Bennett, B.R.

A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the1.0-2.0 mum optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we findDelta n = 1.3 times 10^{5}atlambda = 1.07 mum whenE = 10^{5}V/cm, while the Kerr effect givesDelta n = 10^{-6}at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change ofpm1.5 times 10^{-3}atlambda = 1.3 mum.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan 1987

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