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Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

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5 Author(s)
Jhee, Y.K. ; AT&T Bell Labs., Holmdel, NJ, USA ; Campbell, J.C. ; Ferguson, J.F. ; Dentai, A.G.
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The avalanche buildup time of an avalanche photodiode can be determined from the frequency response of the noise power as a function of the dc multiplication M0. In this paper we report on the first measurements of the avalanche buildup time of InP/InGaAsP/ InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's). Measurements on several different device structures reveal that the avalanche buildup time (gain-bandwidth product) decreases (increases) with increasing carrier concentration in the multiplication region. The shortest buildup time that we have observed wasM_{0} times 4.2ps which corresponds to a gain-bandwidth Product of 38 GHz.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 6 )

Date of Publication:

Jun 1986

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