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Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs

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4 Author(s)
Sermage, B. ; CNET, Bagneux, France ; Chemla, D.S. ; Sivco, D. ; Cho, A.Y.

Carrier lifetime has been measured in GaInAs-AlInAs multiple quantum well structures and in thick GaInAs samples for local carrier densities between2 times 10^{17}and5 times 10^{19}cm-3. Carrier lifetime and Auger recombination are found to be very close (±20 percent) in the two structures. The Auger limited T0values calculated for DH and MQW lasers are found to be, respectively, 93 and 170 K. Optimization of the quantum well laser as a function of the number of wells in the active region is discussed.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 6 )

Date of Publication:

Jun 1986

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