By Topic

The gain-bandwidth of an InSb transphasor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Al-Attar, H. ; Heriot-Watt Univ., Edinburgh, Scotland, UK ; MacKenzie, H. ; Tooley, F.A.P. ; Walker, A.

Detailed results are presented of two-beam optical transistor (transphasor) studies in a single InSb etalon using a CW CO laser to provide the bias beam and a Pb S1-xSExdiode laser to generate a modulated signal. The gain-bandwidth product has been measured to be ∼ 1.2 MHz for gain values ≥ 3 and is reduced at lower gain. A full expression for the absolute value of the optical gain is derived and shows good agreement with these results. An experimental method to estimate the device and material response time through the gain/ frequency dependence is presented. A medium response time of 230 ns ± 10 percent has been deduced for the conditions of these experiments.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 5 )