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Injection locking of diode lasers

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1 Author(s)
Hadley, G.R. ; Sandia Nat''l. Labs., Albuquerque, NM, USA

We present a theoretical analysis of the forward and reflected amplitudes in a diode laser oscillator cavity for both a single resonant mode and an injected signal. The analysis includes gain saturation and allows the gain coefficient at the injected frequency to be different from that at the resonant frequency. Analytic solutions for the axially dependent amplitudes are presented for the case of equal gain coefficients. For the more general case, a formula is presented for the intensity necessary for locking, which is shown to reduce in various limits to other expressions previously published. One immediate consequence of the present formalism is that the use of antireflection coatings on the diode end facets should act to reduce the injected signal intensity necessary for locking. In fact, reduction of the reflectivities to values of a few percent should enable locking over the entire gain curve with incident intensities which are small compared to the slave oscillator's normal output.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 3 )