By Topic

Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Osaka, Fukunobu ; Fujitsu Labs. Ltd., Atsugi, Japan ; Mikawa, T.

An InP/GaInAsP/GaInAs avalanche photodiode (APD) with separate absorption and multiplication (SAM) regions has been designed taking into account the excess noise generated in GaInAsP and GaInAs. The multiplication factor dependence of the excess noise factor F has been calculated using realistic electron and hole ionization rates in InP, GaInAsP, and GaInAs, assuming that the avalanche multiplication occurs not only in InP but in GaInAsP and GaInAs. The calculated F values have been compared to the experimental ones measured on a planar-type InP/GaInAsP/GaInAs APD for illumination at a wavelength of 1.3 μm. It has been found the the calculated excess noise agrees very well with the experimental measurements. The limited ranges of device parameters in which the conditions of minimal excess noise, tunneling current, and charge pile-up are satisfied have been obtained. We conclude that the excess noise generated in GaInAsP and GaInAs should be considered in a practical device design.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 3 )