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Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

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6 Author(s)
Boggess, T. ; North Texas State University, Denton, TX, USA ; Bohnert, K. ; Mansour, K. ; Moss, S.C.
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We report what is to our knowledge the first simultaneous measurement of the two-photon absorption coefficient and the free-carrier cross section above the bandgap in a semiconductor. This is also the first observation of two-photon absorption of 1 μm radiation in single-crystal Si at room temperature in a regime where a two-photon stepwise process involving indirect absorption followed by free-carrier absorption is usually dominant. A critical pulsewidth (and fluence) is established below (and above) which two-photon absorption cannot be neglected. Pulses that range from 4 to 100 ps in duration are then used to isolate the irradiance-dependent two-photon absorption from the fluence-dependent free-carrier absorption. We obtain an indirect two-photon absorption coefficient of 1.5 cm/GW and extract a free-carrier cross section of5 times 10^{-18}cm2by using a simple technique that does not require a knowledge of the actual carrier density.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:22 ,  Issue: 2 )

Date of Publication:

Feb 1986

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