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Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlattice

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3 Author(s)
F. Osaka ; Fujitsu Labs. Ltd., Atsugi, Japan ; T. Mikawa ; O. Wada

The electron and hole impact ionization rates, α andβ, in an InP/Ga0.47In0.53As superlattice have been experimentally determined from photomultiplication data made on an InP/GaInAs superlattice photodiode. A Monte Carlo simulation of α and β in the superlattice has been developed, and the enhancement of impact ionization due to the effect of the band edge discontinuity has been investigated. The experimental ionization rates have been analyzed by the simulation. The larger β than α in the superlattice has been shown to be explained by the valence band discontinuity about two times larger than the conduction band edge discontinuity in this superlattice structure.

Published in:

IEEE Journal of Quantum Electronics  (Volume:22 ,  Issue: 10 )