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Effective mass in picosecond laser-produced high-density plasma in silicon

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2 Author(s)
Guo-Zhen Yang ; Harvard Univ., Cambridge, MA, USA ; N. Bloembergen

Picosecond laser-produced plasmas in silicon attain carrier densities of about 1021/cm3and temperatures of up to the melting point of about 1700 K. The optical data indicate only a slight increase of about 20 percent in the optical effective mass from the value at low density and room temperature. A simple model calculation is presented which confirms this behavior.

Published in:

IEEE Journal of Quantum Electronics  (Volume:22 ,  Issue: 1 )