By Topic

Power dropout statistics of nearly-single-longitudinal-mode semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Abbas, G.L. ; M.I.T., Lincoln Lab., Lexington, MA, USA ; Yee, T.

An experimental study of power dropouts in the main mode of a nearly-single-longitudinal-mode GaAlAs semiconductor laser is presented. Knowledge of the statistics of main-mode power dropout interarrival times, depths, and widths is necessary to estimate the performance of a communication system using such laser diodes. We found that at a typical laser operating bias ( I/I_{th} = 2.1 ), the mean dropout width was 1.8 ns, dropout depths were exponentially distributed, and dropouts falling below 90 percent of the average main-mode power occurred at a rate of 1.5 \times 10^{3} s-1. Also, the rate of dropouts falling below 90 percent of the average main-mode power was found to increase substantially near mode hops, sometimes by several orders of magnitude.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 9 )