By Topic

Bias-temperature life tests for planar-type VPE-grown InGaAs/InP heterostructure APD's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Matsushima, Yuichi ; Waseda University, Tokyo, Japan ; Noda, Y. ; Kushiro, Y.

The fabrication processings and the preliminary bias-temperature life tests for planar-type InGaAs/InP heterostructure avalanche photodiodes (HAPD's) made from VPE-grown wafers are presented. The plasma deposited SiNxpassivation film showed a surface state density Nssof less than 1012cm-2. eV-1. An anomalous behavior of Cd diffusion velocity was observed in the process of the guard-ring formation. A Cr/Au p-side electrode made it possible to reduce the contact failure compared to an Au/Zn contact. Bias-temperature life tests were carried out at three temperature levels: 80, 120, and 180°C. Low-bias life tests ( V_{R} = 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10 000 h. The HAPD's with the guard-ring have been tested under the condition of high electric field ( > 4 \times 10^{5} V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180°C. The HAPD's are still at the prototype stage. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 8 )