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Bias-temperature life tests for planar-type VPE-grown InGaAs/InP heterostructure APD's

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3 Author(s)
Y. Matsushima ; Waseda University, Tokyo, Japan ; Y. Noda ; Y. Kushiro

The fabrication processings and the preliminary bias-temperature life tests for planar-type InGaAs/InP heterostructure avalanche photodiodes (HAPD's) made from VPE-grown wafers are presented. The plasma deposited SiNxpassivation film showed a surface state density Nssof less than 1012cm-2. eV-1. An anomalous behavior of Cd diffusion velocity was observed in the process of the guard-ring formation. A Cr/Au p-side electrode made it possible to reduce the contact failure compared to an Au/Zn contact. Bias-temperature life tests were carried out at three temperature levels: 80, 120, and 180°C. Low-bias life tests ( V_{R} = 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10 000 h. The HAPD's with the guard-ring have been tested under the condition of high electric field ( > 4 \times 10^{5} V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180°C. The HAPD's are still at the prototype stage. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.

Published in:

IEEE Journal of Quantum Electronics  (Volume:21 ,  Issue: 8 )