A new chemical etching technique which offers excellent cavity facets of Ga1-xAlxAs lasers is reported. This technique is based on our finding that the crystallographic anisotropy in the conventional etching process of Ga1-xAlxAs multilayers depends strongly on the AlAs mode fraction in every layer. A suitable combination of the mole fractions in the multilayer is therefore a key factor for obtaining practically vertical walls with sufficient smoothness and flatness as laser cavity facets. In fact, the reflectivity of the etched facet obtained is 28 percent, being compatible to that in the conventional cleaved facets. As a result, a CW operation with threshold current as low as 28 mA and external quantum efficiency as high as 24 percent per facet has been attained with high reproducibility.