Referenced Items are not available for this document.
From 1.3 μm stripe InGaAsP/InP DH lasers, we observed a 950 nm emission band which originates from band-to-band recombination in InP confinement layers. This experimental result can be well explained by considering the overflow of injected carriers from InGaAsP into InP. The overflowed energetic carriers were created by Auger recombination in InGaAsP.
Published in:
Quantum Electronics, IEEE Journal of
(Volume:21
,
Issue:
6
)
Date of Publication: Jun 1985
- Page(s):
- 712 - 715
- ISSN :
- 0018-9197
- Digital Object Identifier :
- 10.1109/JQE.1985.1072699
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Jun 1985
- Sponsored by :
- IEEE Photonics Society
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