Skip to Main Content
From 1.3 μm stripe InGaAsP/InP DH lasers, we observed a 950 nm emission band which originates from band-to-band recombination in InP confinement layers. This experimental result can be well explained by considering the overflow of injected carriers from InGaAsP into InP. The overflowed energetic carriers were created by Auger recombination in InGaAsP.
Date of Publication: Jun 1985