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Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: Spectroscopy of 950 nm high energy emission

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6 Author(s)
Weihua Zhuang ; Institute of Semiconductors, Academia Sinica, Beijing, China ; Baozhen Zheng ; Junying Xu ; Yuzhang Li
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From 1.3 μm stripe InGaAsP/InP DH lasers, we observed a 950 nm emission band which originates from band-to-band recombination in InP confinement layers. This experimental result can be well explained by considering the overflow of injected carriers from InGaAsP into InP. The overflowed energetic carriers were created by Auger recombination in InGaAsP.

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Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 6 )