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1.3 µm high-power BH laser on p-InP substrates

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2 Author(s)
Asano, T. ; Anritsu Electric Co., Ltd., Atsugi Onna, Japan ; Okumura, T.

In our fabrication of a 1.3 μm band high-power BH laser on a p-type InP substrate, 79 mW CW laser output was obtained, and the spectrum width was 10 nm at 50 mW; it also obtained a high-power pulse output of more than 200 mW at 30 ns pulse width. It shows high-speed pulse response at 2 Gbits/s. These CW and pulse lasing characteristics are reported in this paper, and we also show the output and threshold current distribution of about 1000 samples from six wafers. This high-power laser is very useful for light sources of measuring instruments.

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Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 6 )