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Detection of oxygen concentration in silicon wafers using a tunable diode laser

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2 Author(s)
Lo, Wayne ; Research Laboratories, General Motors Corporation, Warren, MI ; Majkowski, Richard F.

Control of the oxygen concentration in silicon wafers is important for the fabrication of high quality integrated circuits. Techniques for the fast detection of oxygen would be desirable for production line quality control. The oxygen concentration in silicon has traditionally been measured by a Fourier transform infrared spectrometer (FTIS). Due to the slow response time (1-10 min), it is not suitable for wafer screening. In this report, we describe a diode laser spectroscopy technique for the fast (10 ms) detection of oxygen in production line silicon wafers. The results are in good agreement with those measured by the Fourier transform technique.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 4 )

Date of Publication:

Apr 1985

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