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A high-frequency GaAs optical guided-wave electrooptic interferometric modulator

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4 Author(s)
Donnelly, J.P. ; Massachusetts Institute of Technology, Lexington, MA, USA ; DeMeo, N. ; Ferrante, G.A. ; Nichols, K.B.

The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 1 )

Date of Publication:

January 1985

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