By Topic

A high-frequency GaAs optical guided-wave electrooptic interferometric modulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Donnelly, J.P. ; Massachusetts Institute of Technology, Lexington, MA, USA ; DeMeo, N. ; Ferrante, G.A. ; Nichols, K.B.

The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:21 ,  Issue: 1 )