Cart (Loading....) | Create Account
Close category search window

Lateral mode discrimination and control in high-power single-mode diode lasers of the large-optical-cavity (LOC) type

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Butler, J.K. ; RCA Lab.,Princeton,NJ. ; Botez, D.

A comprehensive study of lateral mode discrimination and control in weak-laterally-confining large-optical-cavity (LOC)-type structures is presented. The analysis centers on two types of CDH-LOC laser structures: type A, which supports only the fundamental lateral mode in both the passive and active regimes; and type B, which supports several lateral modes in the passive regime and only the fundamental mode in the active regime. The transverse confinement factorGammais peaked in the center of the structure and varies significantly across the lasing region for both device types. In the passive regime it is found that the effective-index (lateral) profile is a W-shaped waveguide for type A devices and a positive-index waveguide for type B devices. A discussion and analysis of losses in W-guides is also presented. Under carrier injection (i.e., active regime) the evolution of W-guides in CDH-LOC structures is presented as a function of increasing current density up to lasing threshold. For both type A and type B devices the effective-index profiles and corresponding lateral far-field patterns are analyzed as a function of threshold mode gain. Carrier-induced bulk-index depressions are found to be in the -0.02 to -0.04 range depending on the value of the threshold mode gain. The corresponding antiguiding parameter,R = k_{o} deltan/deltag, takes values in the -3 to -4 range, which imply values between 6 and 8 for the linewidth enhancement factor α. It is found that by controlling the threshold mode gain (i.e., changing the device length and/or its facet(s) reflectivity) devices of the same cross-sectional geometry can be made to lase either multimode (spatially) or in the fundamental mode.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:20 ,  Issue: 8 )

Date of Publication:

Aug 1984

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.