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Threshold currents for AlGaAs quantum well lasers

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1 Author(s)
A. Sugimura ; Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan

The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution in L valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.

Published in:

IEEE Journal of Quantum Electronics  (Volume:20 ,  Issue: 4 )