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An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process

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3 Author(s)
O. Wada ; Fujitsu Limted, Atsugi, Kanagawa, Japan ; S. Yamakoshi ; T. Sakurai

This paper describes the microcleaved facets (MCF) process developed for AlGaAs/GaAs laser fabrication which can avoid the previous substrate cleavage and therefore be applicable to preparing both discrete short-cavity lasers and optoelectronic integrated circuits (OEIC's). An AlGaAs/GaAs double heterostructure ridge-waveguide laser with an extremely short cavity length, namely 20 μm, was first realized by this process. A threshold current as low as 20 mA and a single longitudinal mode lasing were achieved. The usefulness of this process for integrating a laser and a monitoring photodiode on a GaAs substrate is also demonstrated.

Published in:

IEEE Journal of Quantum Electronics  (Volume:20 ,  Issue: 2 )