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Degradation modes in planar structure in0.53Ga0.47As photodetectors

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5 Author(s)
Y. Tashiro ; Nippon Electric Company, Ltd., Kawasaki, Japan ; K. Taguchi ; Y. Sugimoto ; T. Torikai
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Recoverable and nonrecoverable degradation modes have been found by forced degradation tests in In0.53Ga0.47As heterojunction photodetectors. In0.76Ga0.24As0.55P0.45cap layer and In0.53Ga0.47As light-absorption layer were grown by liquid-phase epitaxy (LPE) on a

Published in:

Journal of Lightwave Technology  (Volume:1 ,  Issue: 1 )