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Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions

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7 Author(s)
Chiu, L.C. ; California Institute of Technology, Pasadena, CA, USA ; Yu, K.L. ; Margalit, S. ; Chen, T.R.
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A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.

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Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 9 )