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Evaluation of InGaAsP laser material by optical pumping

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3 Author(s)
Chraplyvy, A.R. ; Lucent Technologies, Holmdel, NJ, USA ; Kaminow, I.P. ; Dentai, A.G.

A novel technique based on optical pumping has been developed to evaluate InGaAsP laser material before it is processed into electrical devices. By pumping unprocessed InGaAsP chips with cleaved mirrors with a 1.06 μm wavelength Nd:YAG laser and detecting the light emitted by the quaternary active layer, various properties such as laser threshold, wavelength, and differential quantum efficiency can be determined. This technique provides a method for screening InGaAsP laser material prior to time-consuming processing. The technique is also applicable to partially processed laser chips, and hence, the effect of each processing step can be evaluated. We find that threshold pumping intensities andT_{0} (sim60degC), the parameter characterizing the temperature variation of threshold, are virtually the same for chips without and with a p-n junction or alloyed contact.

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Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 9 )