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Gain and carrier lifetime measurements in AlGaAs single quantum well lasers

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3 Author(s)
N. Dutta ; AT&T Bell Laboratories, Murray Hill, NJ, USA ; R. Hartman ; W. Tsang

We have measured the optical gain and carrier lifetime (τ) at threshold in AlGaAs single quantum well lasers in the temperature range 10-70\deg C. The small shift of the spectral position of the gain peak with increasing injection is evidence for the two-dimensional-like density of states in a quantum well. The net gain G is found to vary linearly with the current I . The observed slow decrease of dG/dI and τ with increasing temperature suggests the absence of a large temperature-dependent nonradiative carrier loss or optical absorbtion loss in these lasers. This is also supported by the observed low temperature dependence of the external differential quantum efficiency.

Published in:

IEEE Journal of Quantum Electronics  (Volume:19 ,  Issue: 8 )