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Gain and carrier lifetime measurements in AlGaAs single quantum well lasers

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3 Author(s)
Dutta, N.K. ; AT&T Bell Laboratories, Murray Hill, NJ, USA ; Hartman, R.L. ; Tsang, W.T.

We have measured the optical gain and carrier lifetime (τ) at threshold in AlGaAs single quantum well lasers in the temperature range10-70degC. The small shift of the spectral position of the gain peak with increasing injection is evidence for the two-dimensional-like density of states in a quantum well. The net gainGis found to vary linearly with the currentI. The observed slow decrease ofdG/dIand τ with increasing temperature suggests the absence of a large temperature-dependent nonradiative carrier loss or optical absorbtion loss in these lasers. This is also supported by the observed low temperature dependence of the external differential quantum efficiency.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 8 )

Date of Publication:

Aug 1983

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