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Browse Journals & Magazines > Quantum Electronics, IEEE Jou ...> Volume:19 Issue:8 Help

Low-threshold semiconductor Raman laser

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2 Author(s)
Suto, K. ; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan ; Nishizawa, J.

A semiconductor Raman laser using the longitudinal optical (LO) phonon mode of GaP has a very low threshold compared to the transverse optical (TO) phonon mode of GaP and even compared to simulated Raman scatterings in various kinds of liquids and insulating solid materials. The lowest threshold value of the pulsed input optical power is 8 kW (5 times 10^{6}W/cm2) at room temperature. Far infrared radiation (24.8 μm) has been generated by placing both GaP with the LO phonon mode and GaAs with the TO phonon mode in a Fabry-Perot resonator. The maximum far infrared power has been 3 W.

Published in:
Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 8 )

Date of Publication: Aug 1983

Page(s):
1251 - 1254
ISSN :
0018-9197
Digital Object Identifier :
10.1109/JQE.1983.1072030
Product Type:
Journals & Magazines
Date of Current Version :
06 January 2003
Issue Date :
Aug 1983
Sponsored by :
IEEE Photonics Society

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