Cart (Loading....) | Create Account
Close category search window
 

Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Henry, C.H. ; AT&T Bell Laboratories, Murray Hill, NJ, USA ; Levine, B. ; Logan, Ralph A. ; Bethea, C.G.

Minority carrier lifetimes and quantum efficiencies were measured for a series of 1.3 μm InGaAsP active layers. Radiative and nonradiative components of lifetime as a function of electron and hole density were determined from this data. The measured lifetimes wereT approx 26(1018cm-3/p)1.2ns for p-type, andT approx 33(1018cm-3/n)0.8ns for n-type material. The drop in efficiency with doping is consistent with the ratio of nonradiative and radiative rates being proportional to carrier density. The nonradiative and radiative rates are equal atp = (2.5 pm 0.9)10^{18}cm-3andn = (3.3 pm 0.7)10^{18}cm-3. A lifetime of 200 ns was observed for an undoped sample with a 0.2 μm thick active layer. The long lifetime shows that recombination with background traps is quite small, and that the interface recombination velocity is less than 50 cm/s, an order of magnitude less than for AlGaAs-GaAs double heterostructures. The minority carrier lifetime increases with temperature in lightly doped samples, as expected for radiative recombination, and shows little change with temperature in heavily doped samples. If the measured nonradiative rate is assumed to be due to the free carriers and not due to doping related traps, it can nearly account for the temperature dependence of laser threshold currents and for light-emitting diode efficiency.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 6 )

Date of Publication:

Jun 1983

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.