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Models of the static and dynamic behavior of stripe geometry lasers

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1 Author(s)
J. Buus ; Plessey Research Ltd., Towcester, Northants, England

The rate equations used to find carrier and photon densities in semiconductor lasers are extended to include a spatial variation of the carrier density in the junction plane and combined with a field equation for calculation of the intensity distribution. The equations are solved for both static and dynamic cases, and the model is able to account for nonlinear light current characteristics, near field displacements, and self-sustained pulsations in lasers without a built-in guiding mechanism. The results are compared to both experimental results and predictions from other models.

Published in:

IEEE Journal of Quantum Electronics  (Volume:19 ,  Issue: 6 )