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Very low threshold InGaAsP mesa laser

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7 Author(s)
Chen, T.R. ; California Inst. of Technology, CA, USA ; Chiu, L.C. ; Yu, K.L. ; Koren, U.
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Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 5 )

Date of Publication:

May 1983

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