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Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions

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2 Author(s)
Marshalek, R. ; John Hopkins Univ., Baltimore, MD, USA ; Davidson, F.M.

Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV \leq hf \leq 2.7 eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 4 )