Mode stabilization mechanism of buried-waveguide lasers with lateral diffused junctions

The mode stabilization behavior of the buried active waveguide with lateral diffused junction is theoretically investigated. The study shows that for an active waveguide of width around 5 μm with a lateral diffused junction in the middle, the single fundamental transverse mode is preferred as the injection level is raised. The theoretical results are found to be in good agreement with experimental results observed in the groove transverse junction InGaAsP/InP laser.