Cart (Loading....) | Create Account
Close category search window
 

Mode stabilization mechanism of buried-waveguide lasers with lateral diffused junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yu, K.L. ; California Institute of Technology, Pasadena, CA, USA ; Lau, Kam Y. ; Margalit, Shlomo ; Koren, Uziel
more authors

The mode stabilization behavior of the buried active waveguide with lateral diffused junction is theoretically investigated. The study shows that for an active waveguide of width around 5 μm with a lateral diffused junction in the middle, the single fundamental transverse mode is preferred as the injection level is raised. The theoretical results are found to be in good agreement with experimental results observed in the groove transverse junction InGaAsP/InP laser.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 3 )

Date of Publication:

Mar 1983

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.