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Be-implanted GaInAsP/InP double heterojunction laser diodes

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3 Author(s)
Donnelly, J.P. ; Massachusetts Institute of Technology, Lexington, MA, USA ; Walpole, J.N. ; Liau, Z.L.

Beryllium ion implantation has been used to fabricate broad-area GaInAsP/InP laser diodes operating at a wavelength of 1.3 μm, which have threshold current densities comparable to those obtained using conventional Zn doping during the epitaxial growth process. Both a Be-implant schedule which results in minimal diffusion of the implanted Be and one which results in significant diffusion have been investigated. On most wafers, the average normalized threshold current density (J_{nom} = J_{th}/d) using either implant schedule has been typically 6-8 kA/cm2. μm. The lowest Jnomobserved was 4.2 kA/cm2. μm and was measured on a "nondiffused" implanted laser.

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Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 2 )