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Expression for the fermi energy in narrow-bandgap semiconductors

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1 Author(s)
Joyce, W.B. ; Bell Labs., Murray Hill, NJ, USA

A simple differentiable expression is derived which yields the quasi-Fermi level as a function of the carrier concentration in various narrow-bandgap semiconductor devices, such as PbSnSe lasers, under both nondegenerate and moderately degenerate (lasing) conditions.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 11 )