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Simultaneous stabilization of the frequency and power of an AlGaAs semiconductor laser by use of the optogalvanic effect of krypton

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2 Author(s)
Yamaguchi, S. ; Tokyo Institute of Polytechnics, Kanagawa, Japan ; Suzuki, M.

The frequency of an AlGaAs semiconductor laser operated in the 0.77 μm region has been locked to the optogalvanic signal of Kr I at 7694.5401 Å. By use of a feedback loop to the injection current source, the frequency stability of5.3 times 10^{-11}has been obtained for the 1 s averaging time and of1.5 times 10^{-11}for 240 s. The output power and frequency have been simultaneously stabilized by a combined use of feedback loops to the temperature controller and the injection current source. The drift of the power level for 20 min has been less than 1 μW under the frequency-stabilized condition. The power level adjustability at the frequency-locked state has been discussed. The shift of the laser frequency caused by the power level control has been found to be within 2 MHz in the power dynamic range over 0.7-1.6 mW.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 10 )

Date of Publication:

Oct 1983

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