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Simultaneous stabilization of the frequency and power of an AlGaAs semiconductor laser by use of the optogalvanic effect of krypton

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2 Author(s)
S. Yamaguchi ; Tokyo Institute of Polytechnics, Kanagawa, Japan ; M. Suzuki

The frequency of an AlGaAs semiconductor laser operated in the 0.77 μm region has been locked to the optogalvanic signal of Kr I at 7694.5401 Å. By use of a feedback loop to the injection current source, the frequency stability of 5.3 \times 10^{-11} has been obtained for the 1 s averaging time and of 1.5 \times 10^{-11} for 240 s. The output power and frequency have been simultaneously stabilized by a combined use of feedback loops to the temperature controller and the injection current source. The drift of the power level for 20 min has been less than 1 μW under the frequency-stabilized condition. The power level adjustability at the frequency-locked state has been discussed. The shift of the laser frequency caused by the power level control has been found to be within 2 MHz in the power dynamic range over 0.7-1.6 mW.

Published in:

IEEE Journal of Quantum Electronics  (Volume:19 ,  Issue: 10 )