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Interband Auger recombination in InGaAsP

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3 Author(s)
Chiu, L.C. ; California Institute of Technology, Pasadena, CA 91125 ; Chen, P.C. ; Yariv, A.

The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:18 ,  Issue: 6 )

Date of Publication:

Jun 1982

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