By Topic

Injection locking properties of a semiconductor laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
R. Lang ; Nippon Electric Company, Ltd., Kawasaki, Japan

Injection locking properties of a semiconductor laser have been analyzed, taking into account the injected carrier density dependent refractive index in the active region. It has been found that this dependence significantly affects the injection locking properties, giving rise to a peculiar asymmetric tuning curve and dynamic instability. The instability originates from the intermode interaction via the modulation in the injected carrier density caused by intensity beat. The detuning dependence of the direct modulation response characteristics inside and outside of the locking range have also been examined.

Published in:

IEEE Journal of Quantum Electronics  (Volume:18 ,  Issue: 6 )