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An analytic study of (GaAl)As gain guided lasers at threshold

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3 Author(s)
Streifer, William ; Xerox Palo Alto Research Center, Palo Alto, CA, USA ; Burnham, R. ; Scifres, Don R.

An analysis of gain-guided diode lasers at threshold is presented. After describing the formulation, the effects of charge induced real refractive index antiguiding and gain-charge density relations are studied in detail. Their influence on the threshold current, modal distributions, and the lateral fax-field radiation patterns is discussed. Next a "model" laser is defined and each parameter including dimensions, compositions, stripewidth, diffusion constants, current spreading resistance, and facet reflectivities is individually varied to determine the resulting modifications in laser properties.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:18 ,  Issue: 5 )