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Performance of In0.53Ga0.47As/InP avalanche photodiodes

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3 Author(s)
Forrest, S.R. ; Bell Lab., Murray Hill, NJ, USA ; Smith, R. ; Kim, O.

We calculate operating characteristics of high-sensitivity high-speed In0.53Ga0.47As/InP avalanche photodiodes (APD's). We find that significant photocurrent gain is obtained for a total fixed-charge density of \sigma _{\tot} > 3 \times 10^{12} cm-2in the depleted InP and0.53Ga0.47As regions. To obtain high quantum efficiency and low tunneling currents, the fixed-charge density in the InP must be in the range 2 \times 10^{12} cm-2 \leq \sigma _{B} \leq 3 \times 10^{12} cm-2. We calculate the breakdown voltages for APD's with uniformly doped layers and find that practical detectors with avalanche breakdowns as low as 15 V can be realized. High quantum efficiency and fast response are obtained by compositional grading of the In0.53Ga0.47As heterointerface over a distance of L g\sim 380 Å, depending on the doping and amount of the In0.53Ga0.47As layer swept out at breakdown. Finally, a comparison of calculations with experimental results is presented.

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Quantum Electronics, IEEE Journal of  (Volume:18 ,  Issue: 12 )